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FMS2023
DC-20 GHZ MMIC LOW LOSS SPST ABSORPTIVE SWITCH
FEATURES:
* * * * * Available in die form Non-reflective design Low Insertion loss 1 dB at 20 GHz typical Very high isolation 50 dB at 20 GHz typical Excellent low control voltage performance
Preliminary Datasheet v2.2
FUNCTIONAL SCHEMATIC:
RFin
RFout
GENERAL DESCRIPTION:
The FMS2023 is a low loss high isolation broadband single pole single throw Gallium Arsenide switch designed for use in broadband communications instrumentation and electronic warfare applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology that offers leading edge performance optimised for switch applications.
V1 V2
TYPICAL APPLICATIONS:
* * * Broadband communications Instrumentation Electronic warfare (ECM, ESM)
ELECTRICAL SPECIFICATIONS (based on on-wafer measurements):
PARAMETER
Insertion Loss Insertion Loss Insertion Loss Isolation Isolation Isolation Input Return Loss (on state) Output Return Loss (on state) Output Return Loss (off state) P1dB
CONDITIONS
(DC-10) GHz, Small Signal (10-15) GHz, Small Signal (15-20) GHz, Small Signal (DC-10) GHz, Small Signal (10-15) GHz, Small Signal (15-20) GHz, Small Signal (DC-20) GHz, Small Signal (DC-20) GHz, Small Signal (DC-20) GHz, Small Signal -5V control
MIN
TYP
0.7 0.8 1 47 47 50 20 22 12 26
MAX
UNITS
dB dB dB dB dB dB dB dB ns dBm
Note: TAMBIENT = 25C, Vctrl = 0V/-5V
1
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMS2023
Preliminary Datasheet v2.2
ABSOLUTE MAXIMUM RATINGS:
PARAMETER
Max Input Power Operating Temp Storage Temp
TRUTH TABLE:
CONTROL LINE V1
-5V 0V
SYMBOL
Pin Toper Tstor
ABSOLUTE MAXIMUM
+38dBm -40C to +100C -55C to +150C
RF PATH RFIN-RFO
On (Low Loss) Off (Isolation)
V2
0V -5V
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
Note: -5V 0.2V; 0V 0.2V
PAD LAYOUT:
PAD NAME
RFIN RFO V1 V2
DESCRIPTION
PIN COORDINATES (m)
141,587 1789,587 901,161 1101,161
RFIN RFOUT V1 V2
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening
DIE SIZE (m)
1910 x 1110
DIE THICKNESS (m)
100
MIN. BOND PAD PITCH (m)
150
MIN. BOND PAD OPENING (m x m )
116 x 116
2
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMS2023
Preliminary Datasheet v2.2
TYPICAL MEASURED PERFORMANCE ON WAFER:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25C unless otherwise stated
Insertion Loss (dB)
0
Isolation (dB)
0 -10
-0.5
-20 -30
-1
-40 -50
-1.5
-60 -70
-2 1 6 11 Frequency (GHz) 16 20
-80 1 6 11 Frequency (GHz) 16 20
Input Return Loss (dB)
0
Output Return Loss (dB)
0
ON- STATE OFF-STATE
-10
-10
-20
-20
-30
-30
-40
1 6 11 Frequency (GHz) 16
-40
20
1
6
11 Frequency (GHz)
16
20
3 2.5
10 G Hz 20 G Hz
Loss(dB)
2 1.5 1 0.5 0 1 5 16 1 7 18 19 2 0 21 2 2 23 2 4 25 2 6 In p u t P o w e r (d B m )
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FMS2023
Preliminary Datasheet v2.2
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallised and the recommended mounting method is by the use of solder or conductive epoxy. If epoxy is selected then it should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4m diameter gold wire be used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective results for 25m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections.
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available; please contact Filtronic Compound Semiconductors Ltd.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
ORDERING INFORMATION:
PART NUMBER
FMS2023-000
DESCRIPTION
Die in Waffle-pack (Gel-pak available on request)
4
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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